 |  | | |
| PartNumber | FDP023N08B-F102 | FDP023601-20 | FDP023N08B |
| Description | MOSFET FET 75V 2.35 MOHM TO220 | - Bulk (Alt: FDP023N08B) | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 75 V | - | - |
| Id Continuous Drain Current | 242 A | - | - |
| Rds On Drain Source Resistance | 1.96 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3.8 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 150 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 245 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 16.3 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | FDP023N08B | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.7 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 185 S | - | - |
| Fall Time | 56 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 71 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 111 ns | - | - |
| Typical Turn On Delay Time | 41 ns | - | - |
| Part # Aliases | FDP023N08B_F102 | - | - |
| Unit Weight | 0.082753 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDP023N08B-F102 | MOSFET FET 75V 2.35 MOHM TO220 | |
| FDP023601-20 | New and Original | ||
| FDP023N08B | - Bulk (Alt: FDP023N08B) | ||
| FDP023N08BH | New and Original | ||
| FDP023N08B_F102 | FET 80V 2.7 MOHM TO220 | ||
ON Semiconductor |
FDP023N08B-F102 | MOSFET N-CH 75V 120A TO-220-3 |