FDP045

FDP045N10A-F102 vs FDP045N10 vs FDP045N10AF102

 
PartNumberFDP045N10A-F102FDP045N10FDP045N10AF102
DescriptionMOSFET 100V N-CHANNEL POWERTRENCH MOSFET
ManufacturerON SemiconductorFAIRCHILD-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiMOSFET (Metal Oxide)-
Mounting StyleThrough Hole--
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current120 A--
Rds On Drain Source Resistance3.8 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge57 nC--
Pd Power Dissipation263 W--
ConfigurationSingle--
PackagingTubeTube-
Height16.3 mm--
Length10.67 mm--
SeriesFDP045N10APowerTrench-
Transistor Type1 N-Channel--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min132 S--
Fall Time15 ns--
Product TypeMOSFET--
Rise Time26 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Part # AliasesFDP045N10A_F102--
Unit Weight0.063493 oz--
Part Status-Obsolete-
FET Type-N-Channel-
Drain to Source Voltage (Vdss)-100V-
Current Continuous Drain (Id) @ 25°C-120A (Tc)-
Drive Voltage (Max Rds On, Min Rds On)-10V-
Vgs(th) (Max) @ Id-4V @ 250A-
Gate Charge (Qg) (Max) @ Vgs-74nC @ 10V-
Vgs (Max)-±20V-
Input Capacitance (Ciss) (Max) @ Vds-5270pF @ 50V-
FET Feature---
Power Dissipation (Max)-263W (Tc)-
Rds On (Max) @ Id, Vgs-4.5 mOhm @ 100A, 10V-
Operating Temperature--55°C ~ 175°C (TJ)-
Mounting Type-Through Hole-
Supplier Device Package-TO-220-3-
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDP045N10A-F102 MOSFET 100V N-CHANNEL POWERTRENCH MOSFET
FDP045N10A_F102 Darlington Transistors MOSFET 100V N-CHANNEL POWERTRENCH MOSFET
FDP045N10 New and Original
FDP045N10AF102 New and Original
ON Semiconductor
ON Semiconductor
FDP045N10A MOSFET N-CH 100V 120A TO-220-3
FDP045N10A-F102 MOSFET N-CH 100V 120A TO-220-3
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