PartNumber | FDP045N10A-F102 | FDP045N10 | FDP045N10AF102 |
Description | MOSFET 100V N-CHANNEL POWERTRENCH MOSFET | ||
Manufacturer | ON Semiconductor | FAIRCHILD | - |
Product Category | MOSFET | FETs - Single | - |
RoHS | Y | - | - |
Technology | Si | MOSFET (Metal Oxide) | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-220-3 | TO-220-3 | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 120 A | - | - |
Rds On Drain Source Resistance | 3.8 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 4 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 57 nC | - | - |
Pd Power Dissipation | 263 W | - | - |
Configuration | Single | - | - |
Packaging | Tube | Tube | - |
Height | 16.3 mm | - | - |
Length | 10.67 mm | - | - |
Series | FDP045N10A | PowerTrench | - |
Transistor Type | 1 N-Channel | - | - |
Width | 4.7 mm | - | - |
Brand | ON Semiconductor / Fairchild | - | - |
Forward Transconductance Min | 132 S | - | - |
Fall Time | 15 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 26 ns | - | - |
Factory Pack Quantity | 800 | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | FDP045N10A_F102 | - | - |
Unit Weight | 0.063493 oz | - | - |
Part Status | - | Obsolete | - |
FET Type | - | N-Channel | - |
Drain to Source Voltage (Vdss) | - | 100V | - |
Current Continuous Drain (Id) @ 25°C | - | 120A (Tc) | - |
Drive Voltage (Max Rds On, Min Rds On) | - | 10V | - |
Vgs(th) (Max) @ Id | - | 4V @ 250A | - |
Gate Charge (Qg) (Max) @ Vgs | - | 74nC @ 10V | - |
Vgs (Max) | - | ±20V | - |
Input Capacitance (Ciss) (Max) @ Vds | - | 5270pF @ 50V | - |
FET Feature | - | - | - |
Power Dissipation (Max) | - | 263W (Tc) | - |
Rds On (Max) @ Id, Vgs | - | 4.5 mOhm @ 100A, 10V | - |
Operating Temperature | - | -55°C ~ 175°C (TJ) | - |
Mounting Type | - | Through Hole | - |
Supplier Device Package | - | TO-220-3 | - |