FDP085

FDP085N10A-F102 vs FDP085N10A_F102 vs FDP085N10A

 
PartNumberFDP085N10A-F102FDP085N10A_F102FDP085N10A
DescriptionMOSFET 100V N-CHANNEL POWERTRENCH MOSFET100V 8.5MOHM TO220 3L JEDEC GRMOSFET N-CH 100V TO-220-3
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current96 A--
Rds On Drain Source Resistance7.35 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge31 nC--
Pd Power Dissipation188 W--
ConfigurationSingle--
PackagingTube--
Height16.3 mm--
Length10.67 mm--
SeriesFDP085N10A--
Transistor Type1 N-Channel--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min72 S--
Fall Time8 ns--
Product TypeMOSFET--
Rise Time22 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Part # AliasesFDP085N10A_F102--
Unit Weight0.063493 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDP085N10A-F102 MOSFET 100V N-CHANNEL POWERTRENCH MOSFET
FDP085N10A_F102 100V 8.5MOHM TO220 3L JEDEC GR
ON Semiconductor
ON Semiconductor
FDP085N10A MOSFET N-CH 100V TO-220-3
FDP085N10A-F102 MOSFET N-CH 100V 96A TO-220-3
Top