FDP42

FDP42AN15A0 vs FDP421N15AO vs FDP42AN15

 
PartNumberFDP42AN15A0FDP421N15AOFDP42AN15
DescriptionMOSFET 150V 35a .42 Ohms/VGS=1V
ManufacturerON Semiconductor-FSC
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-220-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage150 V--
Id Continuous Drain Current35 A--
Rds On Drain Source Resistance80 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation150 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenamePowerTrench--
PackagingTube-Tube
Height16.3 mm--
Length10.67 mm--
SeriesFDP42AN15A0--
Transistor Type1 N-Channel-1 N-Channel
TypeMOSFET--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Fall Time23 ns-23 ns
Product TypeMOSFET--
Rise Time19 ns-19 ns
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time27 ns-27 ns
Typical Turn On Delay Time11 ns-11 ns
Part # AliasesFDP42AN15A0_NL--
Unit Weight0.063493 oz-0.063493 oz
Part Aliases--FDP42AN15A0_NL
Package Case--TO-220-3
Pd Power Dissipation--150 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--35 A
Vds Drain Source Breakdown Voltage--150 V
Rds On Drain Source Resistance--80 mOhms
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDP42AN15A0 MOSFET 150V 35a .42 Ohms/VGS=1V
ON Semiconductor
ON Semiconductor
FDP42AN15A0 IGBT Transistors MOSFET 150V 35a .42 Ohms/VGS=1V
FDP421N15AO New and Original
FDP42AN15 New and Original
FDP42AN15A0-ES New and Original
FDP42AN15A0_NL New and Original
FDP42AN15AD New and Original
FDP42AN15AO New and Original
FDP42N15 New and Original
FDP42AN15A0_Q MOSFET 150V 35a .42 Ohms/VGS=1V
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