FDS217

FDS2170N3 vs FDS2170 vs FDS2170N3-NL

 
PartNumberFDS2170N3FDS2170FDS2170N3-NL
DescriptionMOSFET 200V NCh PowerTrench
ManufacturerON SemiconductorFA-
Product CategoryMOSFETFETs - Single-
RoHSE--
TechnologySiMOSFET (Metal Oxide)-
Mounting StyleSMD/SMT--
Package / CaseSO-88-SOIC (0.154", 3.90mm Width)-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current3 A--
Rds On Drain Source Resistance128 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation3 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReelCut Tape (CT)-
Height1.75 mm--
Length4.9 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width3.9 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min15 S--
Fall Time23 ns--
Moisture SensitiveYes--
Product TypeMOSFET--
Rise Time5 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time30 ns--
Typical Turn On Delay Time12 ns--
Unit Weight0.000557 oz--
Series-PowerTrench-
Part Status-Obsolete-
FET Type-N-Channel-
Drain to Source Voltage (Vdss)-200V-
Current Continuous Drain (Id) @ 25°C-3A (Ta)-
Drive Voltage (Max Rds On, Min Rds On)-10V-
Vgs(th) (Max) @ Id-4.5V @ 250A-
Gate Charge (Qg) (Max) @ Vgs-36nC @ 10V-
Vgs (Max)-±20V-
Input Capacitance (Ciss) (Max) @ Vds-1292pF @ 100V-
FET Feature---
Power Dissipation (Max)-3W (Ta)-
Rds On (Max) @ Id, Vgs-128 mOhm @ 3A, 10V-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-8-SOIC-
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDS2170N3 MOSFET 200V NCh PowerTrench
FDS2170 New and Original
FDS2170N3-NL New and Original
FDS2170N3/N7 New and Original
FDS2170N7-NL New and Original
FDS2170N7. New and Original
ON Semiconductor
ON Semiconductor
FDS2170N3 MOSFET N-CH 200V 3A 8-SOIC
FDS2170N7 MOSFET N-CH 200V 3A 8-SOIC
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