FDS861

FDS86106 vs FDS86141 vs FDS86140

 
PartNumberFDS86106FDS86141FDS86140
DescriptionMOSFET 100V N-Channel PowerTrench MOSFETMOSFET 100V N-Channel PowerTrench MOSFETMOSFET N-CH 100V 11.2A 8SOIC
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8SO-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current3.4 A7 A-
Rds On Drain Source Resistance83 mOhms23 mOhms-
Vgs th Gate Source Threshold Voltage4 V3.1 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge3 nC6.7 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation5 W5 W-
ConfigurationSingleSingle-
TradenamePowerTrenchPowerTrench-
PackagingReelReel-
Height1.75 mm1.75 mm-
Length4.9 mm4.9 mm-
SeriesFDS86106FDS86141-
Transistor Type1 N-Channel1 N-Channel-
TypeN-Channel Power Trench MOSFET--
Width3.9 mm3.9 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Forward Transconductance Min6 S19 S-
Fall Time10 ns--
Product TypeMOSFETMOSFET-
Rise Time10 ns--
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time15 ns--
Typical Turn On Delay Time10 ns--
Unit Weight0.004586 oz0.004586 oz-
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDS86106 MOSFET 100V N-Channel PowerTrench MOSFET
FDS86141 MOSFET 100V N-Channel PowerTrench MOSFET
ON Semiconductor
ON Semiconductor
FDS86106 MOSFET N-CH 100V 3.4A 8-SOIC
FDS86140 MOSFET N-CH 100V 11.2A 8SOIC
FDS86141 MOSFET N-CH 100V 7A 8-SOIC
FDS86106-NL New and Original
FDS86140 , NL37WZ17USG New and Original
FDS86140-NL New and Original
FDS86141-NL New and Original
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