PartNumber | FDS8928A | FDS8928 | FDS8928A (ROHS) |
Description | MOSFET SO-8 COMP N-P-CH | ||
Manufacturer | ON Semiconductor | Fairchild Semiconductor | - |
Product Category | MOSFET | FETs - Arrays | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SO-8 | - | - |
Number of Channels | 2 Channel | 2 Channel | - |
Transistor Polarity | N-Channel, P-Channel | N-Channel P-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V, 20 V | - | - |
Id Continuous Drain Current | 5.5 A | - | - |
Rds On Drain Source Resistance | 30 mOhms, 55 mOhms | - | - |
Vgs Gate Source Voltage | 8 V | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 2 W | - | - |
Configuration | Dual | N-Channel P-Channel | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Digi-ReelR Alternate Packaging | - |
Height | 1.75 mm | - | - |
Length | 4.9 mm | - | - |
Series | FDS8928A | - | - |
Transistor Type | 1 N-Channel, 1 P-Channel | 1 N-Channel 1 P-Channel | - |
Type | MOSFET | - | - |
Width | 3.9 mm | - | - |
Brand | ON Semiconductor / Fairchild | - | - |
Forward Transconductance Min | 20 S, 13 S | - | - |
Fall Time | 13 ns, 90 ns | 13 ns 90 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 19 ns, 23 ns | 19 ns 23 ns | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 42 ns, 260 ns | 42 ns 260 ns | - |
Typical Turn On Delay Time | 6 ns, 8 ns | 6 ns 8 ns | - |
Part # Aliases | FDS8928A_NL | - | - |
Unit Weight | 0.008127 oz | 0.006596 oz | - |
Part Aliases | - | FDS8928A_NL | - |
Package Case | - | 8-SOIC (0.154", 3.90mm Width) | - |
Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
Mounting Type | - | Surface Mount | - |
Supplier Device Package | - | 8-SO | - |
FET Type | - | N and P-Channel | - |
Power Max | - | 900mW | - |
Drain to Source Voltage Vdss | - | 30V, 20V | - |
Input Capacitance Ciss Vds | - | 900pF @ 10V | - |
FET Feature | - | Logic Level Gate | - |
Current Continuous Drain Id 25°C | - | 5.5A, 4A | - |
Rds On Max Id Vgs | - | 30 mOhm @ 5.5A, 4.5V | - |
Vgs th Max Id | - | 1V @ 250μA | - |
Gate Charge Qg Vgs | - | 28nC @ 4.5V | - |
Pd Power Dissipation | - | 2 W | - |
Vgs Gate Source Voltage | - | 8 V | - |
Id Continuous Drain Current | - | 5.5 A | - |
Vds Drain Source Breakdown Voltage | - | 30 V - 20 V | - |
Rds On Drain Source Resistance | - | 30 mOhms 55 mOhms | - |
Forward Transconductance Min | - | 20 S 13 S | - |