FDT36

FDT3612 vs FDT361 vs FDT3612 4000/

 
PartNumberFDT3612FDT361FDT3612 4000/
DescriptionMOSFET 100V NCh PowerTrench
ManufacturerON SemiconductorFAIRCHILD-
Product CategoryMOSFETFETs - Single-
RoHSE--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-223-4--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current3.7 A--
Rds On Drain Source Resistance88 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation3 W--
ConfigurationSingleSingle Dual Drain-
Channel ModeEnhancementEnhancement-
TradenamePowerTrench--
PackagingReelReel-
Height1.8 mm--
Length6.5 mm--
SeriesFDT3612--
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFET--
Width3.5 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min11 S--
Fall Time4.5 ns4.5 ns-
Product TypeMOSFET--
Rise Time2 ns2 ns-
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time23 ns23 ns-
Typical Turn On Delay Time8.5 ns8.5 ns-
Part # AliasesFDT3612_NL--
Unit Weight0.003951 oz0.008826 oz-
Part Aliases-FDT3612_NL-
Package Case-SOT-223-3-
Pd Power Dissipation-3 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-3.7 A-
Vds Drain Source Breakdown Voltage-100 V-
Rds On Drain Source Resistance-88 mOhms-
Forward Transconductance Min-11 S-
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDT3612 MOSFET 100V NCh PowerTrench
FDT361 New and Original
FDT3612 4000/ New and Original
FDT3612 3612 New and Original
FDT3612-NL New and Original
FDT3612C New and Original
FDT3612P New and Original
FDT3612_SB82273 New and Original
FDT3622 New and Original
FDT3612-CUT TAPE New and Original
ON Semiconductor
ON Semiconductor
FDT3612 MOSFET N-CH 100V 3.7A SOT-223
Top