PartNumber | FDT434P | FDT434 | FDT434P-NL |
Description | MOSFET SOT-223 P-CH -20V | ||
Manufacturer | ON Semiconductor | Fairchild Semiconductor | FSC |
Product Category | MOSFET | FETs - Single | IC Chips |
RoHS | E | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-223-4 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | P-Channel | P-Channel | - |
Vds Drain Source Breakdown Voltage | 20 V | - | - |
Id Continuous Drain Current | 6 A | - | - |
Rds On Drain Source Resistance | 50 mOhms | - | - |
Vgs Gate Source Voltage | 8 V | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 3 W | - | - |
Configuration | Single | Single Dual Drain | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | PowerTrench | - | - |
Packaging | Reel | Digi-ReelR Alternate Packaging | - |
Height | 1.8 mm | - | - |
Length | 6.5 mm | - | - |
Series | FDT434P | PowerTrenchR | - |
Transistor Type | 1 P-Channel | 1 P-Channel | - |
Type | MOSFET | - | - |
Width | 3.5 mm | - | - |
Brand | ON Semiconductor / Fairchild | - | - |
Forward Transconductance Min | 6.5 S | - | - |
Fall Time | 30 ns | 30 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 15 ns | 15 ns | - |
Factory Pack Quantity | 4000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 45 ns | 45 ns | - |
Typical Turn On Delay Time | 8 ns | 8 ns | - |
Part # Aliases | FDT434P_NL | - | - |
Unit Weight | 0.003951 oz | 0.008826 oz | - |
Part Aliases | - | FDT434P_NL | - |
Package Case | - | TO-261-4, TO-261AA | - |
Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
Mounting Type | - | Surface Mount | - |
Supplier Device Package | - | SOT-223-4 | - |
FET Type | - | MOSFET P-Channel, Metal Oxide | - |
Power Max | - | 1.1W | - |
Drain to Source Voltage Vdss | - | 20V | - |
Input Capacitance Ciss Vds | - | 1187pF @ 10V | - |
FET Feature | - | Logic Level Gate, 2.5V Drive | - |
Current Continuous Drain Id 25°C | - | 6A (Ta) | - |
Rds On Max Id Vgs | - | 50 mOhm @ 6A, 4.5V | - |
Vgs th Max Id | - | 1V @ 250μA | - |
Gate Charge Qg Vgs | - | 19nC @ 4.5V | - |
Pd Power Dissipation | - | 3 W | - |
Vgs Gate Source Voltage | - | 8 V | - |
Id Continuous Drain Current | - | 6 A | - |
Vds Drain Source Breakdown Voltage | - | - 20 V | - |
Rds On Drain Source Resistance | - | 50 mOhms | - |
Forward Transconductance Min | - | 6.5 S | - |