FDW2507

FDW2507NZ vs FDW2507 vs FDW2507N

 
PartNumberFDW2507NZFDW2507FDW2507N
DescriptionMOSFET 2.5V N-Ch MOSFET Common DrainMOSFET 2N-CH 20V 7.5A 8-TSSOP
ManufacturerON Semiconductor-Fairchild Semiconductor
Product CategoryMOSFET-FETs - Arrays
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTSSOP-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current7.5 A--
Rds On Drain Source Resistance19 mOhms--
Vgs Gate Source Voltage12 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.6 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel-Tape & Reel (TR)
Height1 mm--
Length4.4 mm--
ProductMOSFET Small Signal--
Transistor Type2 N-Channel--
TypeMOSFET--
Width3 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min31 S--
Fall Time13 ns--
Product TypeMOSFET--
Rise Time13 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time35 ns--
Typical Turn On Delay Time12 ns--
Part # AliasesFDW2507NZ_NL--
Unit Weight0.000705 oz--
Series--PowerTrenchR
Package Case--8-TSSOP (0.173", 4.40mm Width)
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--8-TSSOP
FET Type--2 N-Channel (Dual)
Power Max--1.1W
Drain to Source Voltage Vdss--20V
Input Capacitance Ciss Vds--2152pF @ 10V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--7.5A
Rds On Max Id Vgs--19 mOhm @ 7.5A, 4.5V
Vgs th Max Id--1.5V @ 250μA
Gate Charge Qg Vgs--28nC @ 4.5V
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDW2507NZ MOSFET 2.5V N-Ch MOSFET Common Drain
FDW2507 New and Original
ON Semiconductor
ON Semiconductor
FDW2507N MOSFET 2N-CH 20V 7.5A 8-TSSOP
FDW2507NZ MOSFET 2N-CH 20V 7.5A 8-TSSOP
FDW2507NZ_NL New and Original
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