FDY302

FDY302NZ vs FDY302NZ , 1N5338B-H vs FDY302NZ,115

 
PartNumberFDY302NZFDY302NZ , 1N5338B-HFDY302NZ,115
DescriptionIGBT Transistors MOSFET 20V Sgl N-Ch 2.5V Spec PwrTrench
ManufacturerFairchild Semiconductor--
Product CategoryFETs - Single--
SeriesPowerTrenchR--
PackagingDigi-ReelR Alternate Packaging--
Unit Weight0.001058 oz--
Mounting StyleSMD/SMT--
Package CaseSC-89, SOT-490--
TechnologySi--
Operating Temperature-55°C ~ 150°C (TJ)--
Mounting TypeSurface Mount--
Number of Channels1 Channel--
Supplier Device PackageSC-89-3--
ConfigurationSingle--
FET TypeMOSFET N-Channel, Metal Oxide--
Power Max446mW--
Transistor Type1 N-Channel--
Drain to Source Voltage Vdss20V--
Input Capacitance Ciss Vds60pF @ 10V--
FET FeatureLogic Level Gate, 2.5V Drive--
Current Continuous Drain Id 25°C600mA (Ta)--
Rds On Max Id Vgs300 mOhm @ 600mA, 4.5V--
Vgs th Max Id1.5V @ 250μA--
Gate Charge Qg Vgs1.1nC @ 4.5V--
Pd Power Dissipation625 mW--
Maximum Operating Temperature+ 150 C--
Minimum Operating Temperature- 55 C--
Fall Time2.4 ns--
Rise Time8 ns--
Vgs Gate Source Voltage12 V--
Id Continuous Drain Current600 mA--
Vds Drain Source Breakdown Voltage20 V--
Vgs th Gate Source Threshold Voltage1 V--
Rds On Drain Source Resistance300 mOhms--
Transistor PolarityN-Channel--
Typical Turn Off Delay Time8 ns--
Typical Turn On Delay Time6 ns--
Qg Gate Charge0.8 nC--
Forward Transconductance Min1.8 S--
Manufacturer Part # Description RFQ
ON Semiconductor
ON Semiconductor
FDY302NZ IGBT Transistors MOSFET 20V Sgl N-Ch 2.5V Spec PwrTrench
FDY302NZ , 1N5338B-H New and Original
FDY302NZ,115 New and Original
FDY302NZ-NL New and Original
FDY302NZ-CUT TAPE New and Original
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