PartNumber | FDY302NZ | FDY302NZ , 1N5338B-H | FDY302NZ,115 |
Description | IGBT Transistors MOSFET 20V Sgl N-Ch 2.5V Spec PwrTrench | ||
Manufacturer | Fairchild Semiconductor | - | - |
Product Category | FETs - Single | - | - |
Series | PowerTrenchR | - | - |
Packaging | Digi-ReelR Alternate Packaging | - | - |
Unit Weight | 0.001058 oz | - | - |
Mounting Style | SMD/SMT | - | - |
Package Case | SC-89, SOT-490 | - | - |
Technology | Si | - | - |
Operating Temperature | -55°C ~ 150°C (TJ) | - | - |
Mounting Type | Surface Mount | - | - |
Number of Channels | 1 Channel | - | - |
Supplier Device Package | SC-89-3 | - | - |
Configuration | Single | - | - |
FET Type | MOSFET N-Channel, Metal Oxide | - | - |
Power Max | 446mW | - | - |
Transistor Type | 1 N-Channel | - | - |
Drain to Source Voltage Vdss | 20V | - | - |
Input Capacitance Ciss Vds | 60pF @ 10V | - | - |
FET Feature | Logic Level Gate, 2.5V Drive | - | - |
Current Continuous Drain Id 25°C | 600mA (Ta) | - | - |
Rds On Max Id Vgs | 300 mOhm @ 600mA, 4.5V | - | - |
Vgs th Max Id | 1.5V @ 250μA | - | - |
Gate Charge Qg Vgs | 1.1nC @ 4.5V | - | - |
Pd Power Dissipation | 625 mW | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Fall Time | 2.4 ns | - | - |
Rise Time | 8 ns | - | - |
Vgs Gate Source Voltage | 12 V | - | - |
Id Continuous Drain Current | 600 mA | - | - |
Vds Drain Source Breakdown Voltage | 20 V | - | - |
Vgs th Gate Source Threshold Voltage | 1 V | - | - |
Rds On Drain Source Resistance | 300 mOhms | - | - |
Transistor Polarity | N-Channel | - | - |
Typical Turn Off Delay Time | 8 ns | - | - |
Typical Turn On Delay Time | 6 ns | - | - |
Qg Gate Charge | 0.8 nC | - | - |
Forward Transconductance Min | 1.8 S | - | - |