PartNumber | FF100R12RT4 | FF100R12RT4HOSA1 | FF100R12YT3 |
Description | IGBT Modules IGBT Module w/ IGBT & Diode | IGBT MODULE VCES 1700V 1000A | IGBT Modules IGBT INVERTER 1200V |
Manufacturer | Infineon | - | INFINEON |
Product Category | IGBT Modules | - | IC Chips |
RoHS | Y | - | - |
Product | IGBT Silicon Modules | - | - |
Collector Emitter Voltage VCEO Max | 1200 V | - | - |
Collector Emitter Saturation Voltage | 2 V | - | - |
Gate Emitter Leakage Current | 100 nA | - | - |
Pd Power Dissipation | 555 W | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Packaging | Tray | - | - |
Brand | Infineon Technologies | - | - |
Maximum Gate Emitter Voltage | 20 V | - | - |
Product Type | IGBT Modules | - | - |
Factory Pack Quantity | 10 | - | - |
Subcategory | IGBTs | - | - |
Part # Aliases | FF100R12RT4HOSA1 SP000624754 | - | - |
Unit Weight | 5.643834 oz | - | - |