 |  | | |
| PartNumber | FF1000R17IE4 | FF1000R17IE4BOSA1 | FF1000R17IE4DB2BOSA1 |
| Description | IGBT Modules N-CH 1.7KV 1.39KA | IGBT MODULE VCES 1700V 1000A | Trans IGBT Module N-CH 1700V 1.39KA 6250000mW Tray |
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Modules | - | - |
| RoHS | Y | - | - |
| Product | IGBT Silicon Modules | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 1700 V | - | - |
| Collector Emitter Saturation Voltage | 2.45 V | - | - |
| Continuous Collector Current at 25 C | 1390 A | - | - |
| Gate Emitter Leakage Current | 400 nA | - | - |
| Pd Power Dissipation | 6.25 kW | - | - |
| Package / Case | PRIME3 | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tray | - | - |
| Height | 38 mm | - | - |
| Length | 250 mm | - | - |
| Width | 89 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Mounting Style | Chassis Mount | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 2 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | FF1000R17IE4BOSA1 SP000609592 | - | - |
| Unit Weight | 2.646 lbs | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
FF1000R17IE4DP_B2 | IGBT Modules | |
| FF1000R17IE4D_B2 | IGBT Modules IGBT 1700V 1000A | ||
| FF1000R17IE4 | IGBT Modules N-CH 1.7KV 1.39KA | ||
| FF1000R17IE4P | IGBT Modules | ||
| FF1000R17IE4PBOSA1 | IGBT MODULE VCES 1700V 1000A | ||
| FF1000R17IE4BOSA1 | IGBT MODULE VCES 1700V 1000A | ||
| FF1000R17IE4DPB2BOSA1 | IGBT MODULE VCES 1700V 1000A | ||
| FF1000R17IE4DB2BOSA1 | Trans IGBT Module N-CH 1700V 1.39KA 6250000mW Tray | ||
| FF1000R17IE4D_B2 | IGBT Modules IGBT 1700V 1000A | ||
| FF1000R17IE4 | IGBT Modules N-CH 1.7KV 1.39KA | ||
| FF1000R17IE4 , 1N5352BG | New and Original | ||
| FF1000R17IE4P | IGBT Modules | ||
| FF1000R17IE4_S2 | New and Original | ||
| FF1000R17IE4DP_B2 | IGBT Modules |