FF150R12KT3

FF150R12KT3G vs FF150R12KT3 vs FF150R12KT3G , 1N5356BRL

 
PartNumberFF150R12KT3GFF150R12KT3FF150R12KT3G , 1N5356BRL
DescriptionIGBT Modules N-CH 1.2KV 225A
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationDual--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.15 V--
Continuous Collector Current at 25 C225 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation780 W--
Package / Case62 mm--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
PackagingTray--
Height30.9 mm--
Length106.4 mm--
Width61.4 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesFF150R12KT3GHOSA1 SP000100788--
Unit Weight12 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
FF150R12KT3G IGBT Modules N-CH 1.2KV 225A
FF150R12KT3GHOSA1 IGBT MODULE VCES 1200V 150A
FF150R12KT3G IGBT Modules N-CH 1.2KV 225A
FF150R12KT3 New and Original
FF150R12KT3G , 1N5356BRL New and Original
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