 |  | | |
| PartNumber | FF150R12ME3G | FF150R12MS4G | FF150R12ME3GBOSA1 |
| Description | IGBT Modules N-CH 1.2KV 200A | IGBT Modules N-CH 1.2KV 225A | IGBT MODULE VCES 1200V 150A |
| Manufacturer | Infineon | Infineon | - |
| Product Category | IGBT Modules | IGBT Modules | - |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | - |
| Configuration | Dual | Dual | - |
| Collector Emitter Voltage VCEO Max | 1200 V | 1200 V | - |
| Collector Emitter Saturation Voltage | 1.7 V | 3.7 V | - |
| Continuous Collector Current at 25 C | 200 A | 225 A | - |
| Gate Emitter Leakage Current | 400 nA | 400 nA | - |
| Pd Power Dissipation | 695 W | 1250 W | - |
| Package / Case | EconoDUAL-3 | Econo D | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 125 C | + 125 C | - |
| Packaging | Tray | Tray | - |
| Height | 17 mm | 17 mm | - |
| Length | 152 mm | 152 mm | - |
| Width | 62 mm | 62 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Mounting Style | Chassis Mount | Chassis Mount | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Product Type | IGBT Modules | IGBT Modules | - |
| Factory Pack Quantity | 10 | 10 | - |
| Subcategory | IGBTs | IGBTs | - |
| Part # Aliases | FF150R12ME3GBOSA1 SP000317332 | FF150R12MS4GBOSA1 SP000091944 | - |
| Unit Weight | 12.169517 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
FF150R12ME3G | IGBT Modules N-CH 1.2KV 200A | |
| FF150R12MS4G | IGBT Modules N-CH 1.2KV 225A | ||
| FF150R12ME3GBOSA1 | IGBT MODULE VCES 1200V 150A | ||
| FF150R12MS4GBOSA1 | Trench and Field Stop IGBT4un | ||
| FF150R12ME3 | New and Original | ||
| FF150R12ME3G | Trans IGBT Module N-CH 1.2KV 200A 11-pin ECONOD-3 - Bulk (Alt: FF150R12ME3G) | ||
| FF150R12MS4G | Trans IGBT Module N-CH 1.2KV 225A 11-pin ECONOD-3 (Alt: FF150R12MS4G) | ||
| FF150R12MT4 | - Bulk (Alt: FF150R12MT4) |