FF150R12R

FF150R12RT4 vs FF150R12RT4HOSA1 vs FF150R12RT4 , 1N5357B

 
PartNumberFF150R12RT4FF150R12RT4HOSA1FF150R12RT4 , 1N5357B
DescriptionIGBT Modules IGBT 1200V 150AIGBT MODULE 1200V 150A
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationDual--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage1.75 V--
Continuous Collector Current at 25 C150 A--
Gate Emitter Leakage Current100 nA--
Pd Power Dissipation790 W--
Package / CaseModule--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTray--
BrandInfineon Technologies--
Mounting StyleSMD/SMT--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesFF150R12RT4HOSA1 SP000624908--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
FF150R12RT4 IGBT Modules IGBT 1200V 150A
FF150R12RT4HOSA1 IGBT MODULE 1200V 150A
FF150R12RT4 IGBT Modules IGBT 1200V 150A
FF150R12RT4 , 1N5357B New and Original
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