FF150R17

FF150R17KE4 vs FF150R17ME3G vs FF150R17KE4HOSA1

 
PartNumberFF150R17KE4FF150R17ME3GFF150R17KE4HOSA1
DescriptionIGBT Modules IGBT Module 150A 1700VIGBT Modules N-CH 1.7KV 240AMODULE IGBT 1700V AG-62MM-1
ManufacturerInfineonInfineon-
Product CategoryIGBT ModulesIGBT Modules-
RoHSY--
ProductIGBT Silicon ModulesIGBT Silicon Modules-
ConfigurationDualDual-
Collector Emitter Voltage VCEO Max1700 V1700 V-
Collector Emitter Saturation Voltage2.45 V--
Continuous Collector Current at 25 C250 A240 A-
Gate Emitter Leakage Current100 nA--
Pd Power Dissipation1100 W--
Package / Case62 mmEcono D-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 125 C-
PackagingTrayTray-
BrandInfineon TechnologiesInfineon Technologies-
Mounting StyleChassis MountChassis Mount-
Maximum Gate Emitter Voltage20 V20 V-
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity1010-
SubcategoryIGBTsIGBTs-
Part # AliasesFF150R17KE4HOSA1 SP000713524FF150R17ME3GBOSA1 SP000091951-
Unit Weight12 oz--
Height-17 mm-
Length-152 mm-
Width-62 mm-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
FF150R17KE4 IGBT Modules IGBT Module 150A 1700V
FF150R17ME3G IGBT Modules N-CH 1.7KV 240A
FF150R17KE4HOSA1 MODULE IGBT 1700V AG-62MM-1
FF150R17ME3GBOSA1 IGBT MODULE VCES 1200V 150A
FF150R17ME3G IGBT Modules N-CH 1.7KV 240A
FF150R17KE4 IGBT Modules IGBT Module 150A 1700V
FF150R170DLC New and Original
FF150R17KF4 New and Original
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