PartNumber | FF200R06KE3 | FF200R12KE3 | FF200R06KE3HOSA1 |
Description | IGBT Modules N-CH 600V 260A | IGBT Modules 1200V 200A DUAL | Trans IGBT Module N-CH 600V 260A 7-Pin Tray |
Manufacturer | Infineon | Infineon | - |
Product Category | IGBT Modules | IGBT Modules | - |
RoHS | Y | N | - |
Product | IGBT Silicon Modules | - | - |
Configuration | Dual | Dual | - |
Collector Emitter Voltage VCEO Max | 600 V | 1200 V | - |
Continuous Collector Current at 25 C | 260 A | 200 A | - |
Package / Case | 62 mm | IS5a ( 62 mm )-7 | - |
Minimum Operating Temperature | - 40 C | - 40 C | - |
Maximum Operating Temperature | + 150 C | + 125 C | - |
Packaging | Tray | Tray | - |
Height | 30.9 mm | 30.9 mm | - |
Length | 106.4 mm | 106.4 mm | - |
Width | 61.4 mm | 61.4 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Mounting Style | Chassis Mount | Chassis Mount | - |
Maximum Gate Emitter Voltage | 20 V | 20 V | - |
Product Type | IGBT Modules | IGBT Modules | - |
Factory Pack Quantity | 10 | 10 | - |
Subcategory | IGBTs | IGBTs | - |
Part # Aliases | FF200R06KE3HOSA1 SP000085283 | FF200R12KE3HOSA1 SP000100735 | - |
Unit Weight | 12 oz | - | - |
Collector Emitter Saturation Voltage | - | 1.7 V | - |
Gate Emitter Leakage Current | - | 400 nA | - |
Pd Power Dissipation | - | 1.05 kW | - |