FF400R12KT

FF400R12KT3 vs FF400R12KT3EHOSA1 vs FF400R12KT3HOSA1

 
PartNumberFF400R12KT3FF400R12KT3EHOSA1FF400R12KT3HOSA1
DescriptionIGBT Modules N-CH 1.2KV 580AIGBT MODULE VCES 650V 400AIGBT MODULE VCES 650V 400A
ManufacturerInfineon--
Product CategoryIGBT Modules--
ProductIGBT Silicon Modules--
ConfigurationDual--
Collector Emitter Voltage VCEO Max1.2 kV--
Collector Emitter Saturation Voltage2.15 V--
Continuous Collector Current at 25 C580 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation2 kW--
Package / Case62 mm--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
PackagingTray--
Height30.9 mm--
Length106.4 mm--
Width61.4 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesFF400R12KT3HOSA1 SP000100791--
Unit Weight11.887325 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
FF400R12KT3P_E IGBT Modules
FF400R12KT3 IGBT Modules N-CH 1.2KV 580A
FF400R12KT3_E IGBT Modules IGBT 1200V 400A
FF400R12KT3EHOSA1 IGBT MODULE VCES 650V 400A
FF400R12KT3PEHOSA1 MOD IGBT MED PWR 62MM-1
FF400R12KT3HOSA1 IGBT MODULE VCES 650V 400A
FF400R12KT3_E IGBT Modules IGBT 1200V 400A
FF400R12KT3 IGBT Modules N-CH 1.2KV 580A
FF400R12KT3-E New and Original
FF400R12KT3P-E New and Original
FF400R12KT3_EENG New and Original
FF400R12KT4 New and Original
Top