FF450R12KT

FF450R12KT4 vs FF450R12KT4HOSA1 vs FF450R12KT4/SL450H120TL

 
PartNumberFF450R12KT4FF450R12KT4HOSA1FF450R12KT4/SL450H120TL
DescriptionIGBT Modules N-CH 1.2KV 580AIGBT MODULE 1200V 450A
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationDual--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.1 V--
Continuous Collector Current at 25 C580 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation2400 W--
Package / Case62 mm--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTray--
Height30.5 mm--
Length106.4 mm--
Width61.4 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesFF450R12KT4HOSA1 SP000370613--
Unit Weight12 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
FF450R12KT4 IGBT Modules N-CH 1.2KV 580A
FF450R12KT4HOSA1 IGBT MODULE 1200V 450A
FF450R12KT4PHOSA1 MOD IGBT MED PWR 62MM-1
FF450R12KT4 IGBT Modules N-CH 1.2KV 580A
FF450R12KT4/SL450H120TL New and Original
FF450R12KT4P New and Original
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