FF450R12ME3

FF450R12ME3 vs FF450R12ME3BOSA1 vs FF450R12ME3ENG

 
PartNumberFF450R12ME3FF450R12ME3BOSA1FF450R12ME3ENG
DescriptionIGBT Modules N-CH 1.2KV 600AMOD IGBT MED PWR ECONOD-3
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationDual--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage1.7 V--
Continuous Collector Current at 25 C600 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation2.1 kW--
Package / CaseEconoDUAL-3--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
PackagingTray--
Height17 mm--
Length152 mm--
Width62 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesFF450R12ME3BOSA1 SP000317626--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
FF450R12ME3 IGBT Modules N-CH 1.2KV 600A
FF450R12ME3BOSA1 MOD IGBT MED PWR ECONOD-3
FF450R12ME3 IGBT Modules N-CH 1.2KV 600A
FF450R12ME3ENG New and Original
Top