FF450R12ME4_B

FF450R12ME4EB11BPSA1 vs FF450R12ME4PB11BOSA1 vs FF450R12ME4PBOSA1

 
PartNumberFF450R12ME4EB11BPSA1FF450R12ME4PB11BOSA1FF450R12ME4PBOSA1
DescriptionIGBT ModulesIGBT MODULE VCES 600V 450AIGBT MODULE VCES 600V 450A
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationCommon Emitter--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage1.75 V--
Continuous Collector Current at 25 C450 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation20 mW--
Package / Case152 mm x 62.5 mm x 20.5 mm--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTray--
BrandInfineon Technologies--
Mounting StylePress Fit--
Maximum Gate Emitter Voltage15 V--
Product TypeIGBT Modules--
Factory Pack Quantity6--
SubcategoryIGBTs--
Part # AliasesSP001671620--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
FF450R12ME4EB11BPSA1 IGBT Modules
FF450R12ME4_B11 IGBT Modules IGBT Module 450A 1200V
FF450R12ME4EB11BPSA1 MEDIUM POWER ECONO
FF450R12ME4PB11BOSA1 IGBT MODULE VCES 600V 450A
FF450R12ME4PBOSA1 IGBT MODULE VCES 600V 450A
FF450R12ME4_B11 IGBT Modules IGBT Module 450A 1200V
FF450R12ME4-B11 New and Original
FF450R12ME4-B60 New and Original
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