PartNumber | FF600R12ME4EB11BOSA1 | FF600R12ME4P | FF600R12ME4CP_B11 |
Description | IGBT Modules | IGBT Modules | IGBT Modules |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
RoHS | Y | Y | - |
Product | IGBT Silicon Modules | - | - |
Configuration | Common Emitter | - | - |
Collector Emitter Voltage VCEO Max | 1200 V | - | - |
Collector Emitter Saturation Voltage | 1.75 V | - | - |
Continuous Collector Current at 25 C | 600 A | - | - |
Gate Emitter Leakage Current | 400 nA | - | - |
Pd Power Dissipation | 20 mW | - | - |
Package / Case | 152 mm x 62.5 mm x 20.5 mm | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Packaging | Tray | Tray | Tray |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Mounting Style | Press Fit | - | - |
Maximum Gate Emitter Voltage | 15 V | - | - |
Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
Factory Pack Quantity | 6 | 6 | 6 |
Subcategory | IGBTs | IGBTs | IGBTs |
Part # Aliases | SP001671626 | FF600R12ME4PBOSA1 SP001102658 | FF600R12ME4CPB11BPSA1 SP001287596 |