FF75R1

FF75R12RT4 vs FF75R12YT3 vs FF75R12RT4HOSA1

 
PartNumberFF75R12RT4FF75R12YT3FF75R12RT4HOSA1
DescriptionIGBT Modules IGBT 1200V 75AIGBT Modules N-CH 1.2KV 100AIGBT MODULE VCES 1200V 75A
ManufacturerInfineonInfineon-
Product CategoryIGBT ModulesIGBT Modules-
ProductIGBT Silicon ModulesIGBT Silicon Modules-
ConfigurationDualDual-
Collector Emitter Voltage VCEO Max1200 V1200 V-
Collector Emitter Saturation Voltage2.15 V--
Continuous Collector Current at 25 C75 A100 A-
Gate Emitter Leakage Current100 nA--
Pd Power Dissipation395 W--
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 125 C-
PackagingTrayTray-
BrandInfineon TechnologiesInfineon Technologies-
Mounting StyleChassis MountChassis Mount-
Maximum Gate Emitter Voltage20 V20 V-
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity1020-
SubcategoryIGBTsIGBTs-
Part # AliasesFF75R12RT4HOSA1 SP000624916FF75R12YT3BOMA1 SP000100348-
Unit Weight5.643834 oz--
Package / Case-EASY2-
Height-17 mm-
Length-55.9 mm-
Width-45.6 mm-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
FF75R12RT4 IGBT Modules IGBT 1200V 75A
FF75R12YT3 IGBT Modules N-CH 1.2KV 100A
FF75R12RT4HOSA1 IGBT MODULE VCES 1200V 75A
FF75R12YT3BOMA1 IGBT MODULE VCES 1200V 75A
FF75R12RT4 IGBT Modules IGBT 1200V 75A
FF75R12YT3 IGBT Modules N-CH 1.2KV 100A
FF75R12KE3 New and Original
FF75R12KF2 New and Original
FF75R12KL New and Original
FF75R12KT3 New and Original
FF75R12KT4 New and Original
FF75R12RT4 , 1N5384BRL New and Original
FF75R12XT3 New and Original
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