FF75R12R

FF75R12RT4 vs FF75R12RT4HOSA1 vs FF75R12RT4 , 1N5384BRL

 
PartNumberFF75R12RT4FF75R12RT4HOSA1FF75R12RT4 , 1N5384BRL
DescriptionIGBT Modules IGBT 1200V 75AIGBT MODULE VCES 1200V 75A
ManufacturerInfineon--
Product CategoryIGBT Modules--
ProductIGBT Silicon Modules--
ConfigurationDual--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.15 V--
Continuous Collector Current at 25 C75 A--
Gate Emitter Leakage Current100 nA--
Pd Power Dissipation395 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTray--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesFF75R12RT4HOSA1 SP000624916--
Unit Weight5.643834 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
FF75R12RT4 IGBT Modules IGBT 1200V 75A
FF75R12RT4HOSA1 IGBT MODULE VCES 1200V 75A
FF75R12RT4 IGBT Modules IGBT 1200V 75A
FF75R12RT4 , 1N5384BRL New and Original
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