PartNumber | FF800R12KE3 | FF800R12KF4 | FF800R12KE3NOSA1 |
Description | IGBT Modules 1200V 800A DUAL | IGBT Modules 1200V 800A DUAL | IGBT MODULE VCES 1200V 800A |
Manufacturer | Infineon | Infineon | - |
Product Category | IGBT Modules | IGBT Modules | - |
RoHS | N | N | - |
Product | IGBT Silicon Modules | IGBT Silicon Modules | - |
Configuration | Dual | Dual | - |
Collector Emitter Voltage VCEO Max | 1200 V | 1200 V | - |
Collector Emitter Saturation Voltage | 1.7 V | 2.7 V | - |
Continuous Collector Current at 25 C | 1200 A | 800 A | - |
Gate Emitter Leakage Current | 400 nA | 400 nA | - |
Pd Power Dissipation | 3.9 kW | 5 kW | - |
Package / Case | IHM130 | IHM | - |
Minimum Operating Temperature | - 40 C | - 40 C | - |
Maximum Operating Temperature | + 125 C | + 125 C | - |
Packaging | Tray | - | - |
Height | 38 mm | 38 mm | - |
Length | 140 mm | 140 mm | - |
Width | 130 mm | 130 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Mounting Style | SMD/SMT | Chassis Mount | - |
Maximum Gate Emitter Voltage | 20 V | 20 V | - |
Product Type | IGBT Modules | IGBT Modules | - |
Factory Pack Quantity | 2 | 2 | - |
Subcategory | IGBTs | IGBTs | - |
Part # Aliases | FF800R12KE3NOSA1 SP000100571 | - | - |
Technology | - | Si | - |