PartNumber | FF900R12IP4D | FF900R12IP4 | FF900R12IP4BOSA2 |
Description | IGBT Modules N-CH 1.2KV 900A | IGBT Modules IGBT-MODULE | IGBT MODULE 1200V 900A |
Manufacturer | Infineon | Infineon | - |
Product Category | IGBT Modules | IGBT Modules | - |
Product | IGBT Silicon Modules | IGBT Silicon Modules | - |
Collector Emitter Voltage VCEO Max | 1200 V | 1200 V | - |
Continuous Collector Current at 25 C | 900 A | 900 A | - |
Package / Case | PRIME2 | PRIME2 | - |
Minimum Operating Temperature | - 40 C | - 40 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Packaging | Tray | Tray | - |
Height | 38 mm | 38 mm | - |
Length | 172 mm | 172 mm | - |
Width | 89 mm | 89 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Mounting Style | Chassis Mount | Chassis Mount | - |
Maximum Gate Emitter Voltage | 20 V | 20 V | - |
Product Type | IGBT Modules | IGBT Modules | - |
Factory Pack Quantity | 3 | 3 | - |
Subcategory | IGBTs | IGBTs | - |
Part # Aliases | FF900R12IP4DBOSA2 SP000614716 | FF900R12IP4BOSA2 SP000609750 | - |
Unit Weight | 1.819 lbs | 1.819 lbs | - |
RoHS | - | Y | - |
Configuration | - | Dual | - |
Collector Emitter Saturation Voltage | - | 2.1 V | - |
Gate Emitter Leakage Current | - | 400 nA | - |
Pd Power Dissipation | - | 5.1 kW | - |