 |  | | |
| PartNumber | FFB5551 | FFB5551 /LID | FFB5551 , 1N5399 |
| Description | Bipolar Transistors - BJT NPN MULTI-CHIP GEN PURPOSE | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SC-70-6 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 160 V | - | - |
| Collector Base Voltage VCBO | 180 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Maximum DC Collector Current | 0.2 A | - | - |
| Gain Bandwidth Product fT | 300 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | FFB5551 | - | - |
| DC Current Gain hFE Max | 250 | - | - |
| Height | 1 mm | - | - |
| Length | 2 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.25 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Continuous Collector Current | 200 mA | - | - |
| DC Collector/Base Gain hfe Min | 80 | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000988 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FFB5551 | Bipolar Transistors - BJT NPN MULTI-CHIP GEN PURPOSE | |
ON Semiconductor |
FFB5551 | TRANS 2NPN 160V 0.2A SC70-6 | |
| FFB5551-SBDB002A | New and Original | ||
| FFB5551 /LID | New and Original | ||
| FFB5551 , 1N5399 | New and Original | ||
| FFB5551-NL | New and Original |