| PartNumber | FGA5065ADF | FGA50N100BNTDTU | FGA50N100BNTD2 |
| Description | IGBT Transistors FS3TIGBT TO3PN 50A 650V | IGBT Transistors 600V 4 0A UFD | IGBT Transistors N-ch / 50A 1000V |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Package / Case | TO-3PN | TO-3P-3 | TO-3PN |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 650 V | 1000 V | 1000 V |
| Collector Emitter Saturation Voltage | 2.28 V | 2.5 V | 1.5 V |
| Maximum Gate Emitter Voltage | 30 V | 25 V | 25 V |
| Continuous Collector Current at 25 C | 100 A | - | 50 A |
| Pd Power Dissipation | 268 W | 156 W | 156 W |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
| Series | FGA5065ADF | FGA50N100BNTD | FGA50N100BNTD2 |
| Packaging | Tube | Tube | Tube |
| Continuous Collector Current Ic Max | 50 A | 50 A | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Gate Emitter Leakage Current | +/- 400 nA | +/- 500 nA | 500 nA |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 450 | 450 | 450 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 0.225789 oz | 0.225789 oz | 0.225789 oz |
| Height | - | 18.9 mm | - |
| Length | - | 15.8 mm | - |
| Width | - | 5 mm | - |
| Continuous Collector Current | - | 50 A | - |