FGAF2

FGAF20N60SMD vs FGAF20N60 vs FGAF20N60SMD-YX

 
PartNumberFGAF20N60SMDFGAF20N60FGAF20N60SMD-YX
DescriptionIGBT Transistors 600 V 40 A 62.5 W
ManufacturerON Semiconductor--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-3PF--
Mounting StyleThrough Hole--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.9 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C40 A--
Pd Power Dissipation62.5 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
SeriesFGAF20N60SMD--
PackagingTube--
BrandON Semiconductor / Fairchild--
Gate Emitter Leakage Current400 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity360--
SubcategoryIGBTs--
Unit Weight0.245577 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FGAF20N60SMD IGBT Transistors 600 V 40 A 62.5 W
ON Semiconductor
ON Semiconductor
FGAF20N60SMD IGBT Transistors 600 V 40 A 62.5 W
FGAF20N60 New and Original
FGAF20N60SMD-YX New and Original
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