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FGD34

FGD3440G2-F085 vs FGD3440G2_F085 vs FGD3440G2

 
PartNumberFGD3440G2-F085FGD3440G2_F085FGD3440G2
DescriptionIGBT Transistors EcoSPARK2 335mJ 400V N-Chan Ignition IGBTIGBT Transistors EcoSPARK2 335mJ 400V N-Chan Ignition IGBTIGBT 400V 26.9A 166W DPAK
ManufacturerON SemiconductorFairchild Semiconductor-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-252--
Mounting StyleSMD/SMTSMD/SMT-
Collector Emitter Voltage VCEO Max400 V--
Collector Emitter Saturation Voltage1.1 V1.1 V-
Maximum Gate Emitter Voltage14 V14 V-
Continuous Collector Current at 25 C26.9 A26.9 A-
Pd Power Dissipation166 W--
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 125 C+ 125 C-
SeriesFGD3440G2_F085Automotive, AEC-Q101, EcoSPARKR-
QualificationAEC-Q101--
PackagingReelDigi-ReelR Alternate Packaging-
BrandON Semiconductor / Fairchild--
Product TypeIGBT Transistors--
Factory Pack Quantity2500--
SubcategoryIGBTs--
Part # AliasesFGD3440G2_F085--
Unit Weight0.016579 oz0.009184 oz-
Package Case-TO-252-3, DPak (2 Leads + Tab), SC-63-
Input Type-Logic-
Mounting Type-Surface Mount-
Supplier Device Package-TO-252, (D-Pak)-
Power Max-166W-
Reverse Recovery Time trr---
Current Collector Ic Max-26.9A-
Voltage Collector Emitter Breakdown Max-400V-
IGBT Type---
Current Collector Pulsed Icm---
Vce on Max Vge Ic-1.2V @ 4V, 6A-
Switching Energy---
Gate Charge-24nC-
Td on off 25°C--/5.3μs-
Test Condition-300V, 6.5A, 1 kOhm, 5V-
Pd Power Dissipation-166 W-
Collector Emitter Voltage VCEO Max-400 V-
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild 		FGD3440G2-F085 IGBT Transistors EcoSPARK2 335mJ 400V N-Chan Ignition IGBT
FGD3440G2_F085 IGBT Transistors EcoSPARK2 335mJ 400V N-Chan Ignition IGBT
ON Semiconductor
ON Semiconductor 		FGD3440G2 IGBT 400V 26.9A 166W DPAK
FGD3440G2-F085 IGBT 400V 26.9A 166W DPAK
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