FGH40T65SHDF

FGH40T65SHDF-F155 vs FGH40T65SHDF_F155 vs FGH40T65SHDF

 
PartNumberFGH40T65SHDF-F155FGH40T65SHDF_F155FGH40T65SHDF
DescriptionIGBT Transistors 650V FS Gen3 Trench IGBTIGBT Transistors 650V FS Gen3 Trench IGBT
ManufacturerON SemiconductorFairchild Semiconductor-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max650 V--
Collector Emitter Saturation Voltage1.45 V1.45 V-
Maximum Gate Emitter Voltage30 V30 V-
Continuous Collector Current at 25 C80 A80 A-
Pd Power Dissipation268 W--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
SeriesFGH40T65SHDF--
PackagingTubeTube-
Continuous Collector Current Ic Max80 A80 A-
BrandON Semiconductor / Fairchild--
Gate Emitter Leakage Current400 nA400 nA-
Product TypeIGBT Transistors--
Factory Pack Quantity450--
SubcategoryIGBTs--
Part # AliasesFGH40T65SHDF_F155--
Unit Weight0.225401 oz0.225401 oz-
Package Case-TO-247-3-
Input Type-Standard-
Mounting Type-Through Hole-
Supplier Device Package-TO-247-3-
Power Max-268W-
Reverse Recovery Time trr-101ns-
Current Collector Ic Max-80A-
Voltage Collector Emitter Breakdown Max-650V-
IGBT Type-Field Stop-
Current Collector Pulsed Icm-120A-
Vce on Max Vge Ic-1.81V @ 15V, 40A-
Switching Energy-1.22mJ (on), 440μJ (off)-
Gate Charge-68nC-
Td on off 25°C-18ns/64ns-
Test Condition-400V, 40A, 6 Ohm, 15V-
Pd Power Dissipation-268 W-
Collector Emitter Voltage VCEO Max-650 V-
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FGH40T65SHDF-F155 IGBT Transistors 650V FS Gen3 Trench IGBT
FGH40T65SHDF_F155 IGBT Transistors 650V FS Gen3 Trench IGBT
FGH40T65SHDF New and Original
ON Semiconductor
ON Semiconductor
FGH40T65SHDF-F155 IGBT 650V 80A 268W TO-247-3
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