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| PartNumber | FGH40T65SHDF-F155 | FGH40T65SHDF_F155 | FGH40T65SHDF |
| Description | IGBT Transistors 650V FS Gen3 Trench IGBT | IGBT Transistors 650V FS Gen3 Trench IGBT | |
| Manufacturer | ON Semiconductor | Fairchild Semiconductor | - |
| Product Category | IGBT Transistors | IGBTs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-247-3 | - | - |
| Mounting Style | Through Hole | Through Hole | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 650 V | - | - |
| Collector Emitter Saturation Voltage | 1.45 V | 1.45 V | - |
| Maximum Gate Emitter Voltage | 30 V | 30 V | - |
| Continuous Collector Current at 25 C | 80 A | 80 A | - |
| Pd Power Dissipation | 268 W | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Series | FGH40T65SHDF | - | - |
| Packaging | Tube | Tube | - |
| Continuous Collector Current Ic Max | 80 A | 80 A | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Gate Emitter Leakage Current | 400 nA | 400 nA | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 450 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | FGH40T65SHDF_F155 | - | - |
| Unit Weight | 0.225401 oz | 0.225401 oz | - |
| Package Case | - | TO-247-3 | - |
| Input Type | - | Standard | - |
| Mounting Type | - | Through Hole | - |
| Supplier Device Package | - | TO-247-3 | - |
| Power Max | - | 268W | - |
| Reverse Recovery Time trr | - | 101ns | - |
| Current Collector Ic Max | - | 80A | - |
| Voltage Collector Emitter Breakdown Max | - | 650V | - |
| IGBT Type | - | Field Stop | - |
| Current Collector Pulsed Icm | - | 120A | - |
| Vce on Max Vge Ic | - | 1.81V @ 15V, 40A | - |
| Switching Energy | - | 1.22mJ (on), 440μJ (off) | - |
| Gate Charge | - | 68nC | - |
| Td on off 25°C | - | 18ns/64ns | - |
| Test Condition | - | 400V, 40A, 6 Ohm, 15V | - |
| Pd Power Dissipation | - | 268 W | - |
| Collector Emitter Voltage VCEO Max | - | 650 V | - |