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| PartNumber | FGH40T65SPD-F085 | FGH40T65SPD-F155 | FGH40T65SPD |
| Description | IGBT Transistors 650V 40A Field Stop Trench IGBT | IGBT Transistors FS3TIGBT TO247 40A 650V | |
| Manufacturer | ON Semiconductor | ON Semiconductor | Fairchild Semiconductor |
| Product Category | IGBT Transistors | IGBT Transistors | IGBTs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Package / Case | TO-247-3 | TO-247-3 | - |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 650 V | 650 V | - |
| Collector Emitter Saturation Voltage | 1.85 V | 2.51 V | 2.51 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Continuous Collector Current at 25 C | 80 A | 80 A | 80 A |
| Pd Power Dissipation | 267 W | 267 W | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Series | FGH40T65SP_F085 | FGH40T65SPD | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Tube | Tube | Tube |
| Continuous Collector Current Ic Max | 40 A | 40 A | 40 A |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Gate Emitter Leakage Current | +/- 400 nA | 400 nA | 400 nA |
| Product Type | IGBT Transistors | IGBT Transistors | - |
| Factory Pack Quantity | 450 | 450 | - |
| Subcategory | IGBTs | IGBTs | - |
| Part # Aliases | FGH40T65SPD_F085 | FGH40T65SPD_F155 | - |
| Unit Weight | 0.225401 oz | 0.225401 oz | 0.225401 oz |
| Package Case | - | - | TO-247-3 |
| Input Type | - | - | Standard |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | TO-247 |
| Power Max | - | - | 267W |
| Reverse Recovery Time trr | - | - | 34ns |
| Current Collector Ic Max | - | - | 80A |
| Voltage Collector Emitter Breakdown Max | - | - | 650V |
| IGBT Type | - | - | Trench Field Stop |
| Current Collector Pulsed Icm | - | - | 120A |
| Vce on Max Vge Ic | - | - | 2.4V @ 15V, 40A |
| Switching Energy | - | - | 1.16mJ (on), 280μJ (off) |
| Gate Charge | - | - | 35nC |
| Td on off 25°C | - | - | 16ns/37ns |
| Test Condition | - | - | 400V, 40A, 6 Ohm, 15V |
| Pd Power Dissipation | - | - | 267 W |
| Collector Emitter Voltage VCEO Max | - | - | 650 V |