PartNumber | FGH50N6S2D | FGH50N6S2D AG | FGH50N6S2D,50N6S2D |
Description | IGBT Transistors Comp 600V N-Ch | ||
Manufacturer | ON Semiconductor | - | - |
Product Category | IGBT Transistors | - | - |
RoHS | E | - | - |
Technology | Si | - | - |
Package / Case | TO-247-3 | - | - |
Mounting Style | Through Hole | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 600 V | - | - |
Collector Emitter Saturation Voltage | 1.9 V | - | - |
Maximum Gate Emitter Voltage | 20 V | - | - |
Continuous Collector Current at 25 C | 75 A | - | - |
Pd Power Dissipation | 463 W | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | FGH50N6S2D | - | - |
Packaging | Tube | - | - |
Continuous Collector Current Ic Max | 75 A | - | - |
Height | 20.82 mm | - | - |
Length | 15.87 mm | - | - |
Width | 4.82 mm | - | - |
Brand | ON Semiconductor / Fairchild | - | - |
Continuous Collector Current | 75 A | - | - |
Gate Emitter Leakage Current | +/- 250 nA | - | - |
Product Type | IGBT Transistors | - | - |
Factory Pack Quantity | 450 | - | - |
Subcategory | IGBTs | - | - |
Part # Aliases | FGH50N6S2D_NL | - | - |
Unit Weight | 0.225401 oz | - | - |