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FGP15N6

FGP15N60UNDF vs FGP15N60RUFD vs FGP15N60UND

 
PartNumberFGP15N60UNDFFGP15N60RUFDFGP15N60UND
DescriptionIGBT Transistors 600V 15A NPT IGBT
ManufacturerON Semiconductor-Fairchild Semiconductor
Product CategoryIGBT Transistors-IGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-220-3--
Mounting StyleThrough Hole-Through Hole
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.7 V-2.7 V
Maximum Gate Emitter Voltage20 V-+/- 20 V
Continuous Collector Current at 25 C30 A-30 A
Pd Power Dissipation178 W--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesFGP15N60UNDF--
PackagingTube-Tube
BrandON Semiconductor / Fairchild--
Gate Emitter Leakage Current+/- 10 uA-+/- 10 uA
Product TypeIGBT Transistors--
Factory Pack Quantity800--
SubcategoryIGBTs--
Unit Weight0.063493 oz-0.063493 oz
Package Case--TO-220-3
Input Type--Standard
Mounting Type--Through Hole
Supplier Device Package--TO-220-3
Power Max--178W
Reverse Recovery Time trr--82.4ns
Current Collector Ic Max--30A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type--NPT
Current Collector Pulsed Icm--45A
Vce on Max Vge Ic--2.7V @ 15V, 15A
Switching Energy--370μJ (on), 67μJ (off)
Gate Charge--43nC
Td on off 25°C--9.3ns/54.8ns
Test Condition--400V, 15A, 10 Ohm, 15V
Pd Power Dissipation--178 W
Collector Emitter Voltage VCEO Max--600 V
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild 		FGP15N60UNDF IGBT Transistors 600V 15A NPT IGBT
ON Semiconductor
ON Semiconductor 		FGP15N60UNDF IGBT Transistors 600V 15A NPT IGBT
FGP15N60RUFD New and Original
FGP15N60UND New and Original
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