PartNumber | FGP5N60LS | FGP5N60UFDTU |
Description | IGBT Transistors 600V/5A Field Stop Low Vcesat | IGBT Transistors 600V, 5A Field Stop |
Manufacturer | ON Semiconductor | ON Semiconductor |
Product Category | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y |
Technology | Si | Si |
Package / Case | TO-220-3 | TO-220-3 |
Mounting Style | Through Hole | Through Hole |
Collector Emitter Voltage VCEO Max | 600 V | 600 V |
Collector Emitter Saturation Voltage | 1.8 V | - |
Maximum Gate Emitter Voltage | 20 V | 20 V |
Continuous Collector Current at 25 C | 10 A | - |
Pd Power Dissipation | 83 W | - |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 125 C | + 150 C |
Series | FGP5N60LS | - |
Packaging | Tube | Tube |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Gate Emitter Leakage Current | 400 nA | - |
Product Type | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 800 | 400 |
Subcategory | IGBTs | IGBTs |
Unit Weight | 0.063493 oz | 0.211644 oz |
Configuration | - | Single |
Continuous Collector Current Ic Max | - | 10 A |
Height | - | 9.4 mm |
Length | - | 10.67 mm |
Width | - | 4.83 mm |