![]() | ||
| PartNumber | FGP5N60LS | FGP5N60UFDTU |
| Description | IGBT Transistors 600V/5A Field Stop Low Vcesat | IGBT Transistors 600V, 5A Field Stop |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y |
| Technology | Si | Si |
| Package / Case | TO-220-3 | TO-220-3 |
| Mounting Style | Through Hole | Through Hole |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V |
| Collector Emitter Saturation Voltage | 1.8 V | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V |
| Continuous Collector Current at 25 C | 10 A | - |
| Pd Power Dissipation | 83 W | - |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 125 C | + 150 C |
| Series | FGP5N60LS | - |
| Packaging | Tube | Tube |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Gate Emitter Leakage Current | 400 nA | - |
| Product Type | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 800 | 400 |
| Subcategory | IGBTs | IGBTs |
| Unit Weight | 0.063493 oz | 0.211644 oz |
| Configuration | - | Single |
| Continuous Collector Current Ic Max | - | 10 A |
| Height | - | 9.4 mm |
| Length | - | 10.67 mm |
| Width | - | 4.83 mm |