PartNumber | FJA4313OTU | FJA4313RTU |
Description | Bipolar Transistors - BJT NPN Epitaxial Sil | Bipolar Transistors - BJT NPN Epitaxial Silicon Transistor |
Manufacturer | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-3P-3 | TO-3P-3 |
Transistor Polarity | NPN | NPN |
Configuration | Single | Single |
Collector Emitter Voltage VCEO Max | 230 V | 250 V |
Collector Base Voltage VCBO | 230 V | 250 V |
Emitter Base Voltage VEBO | 5 V | 5 V |
Collector Emitter Saturation Voltage | 0.4 V | 0.4 V |
Maximum DC Collector Current | 15 A | 17 A |
Gain Bandwidth Product fT | 30 MHz | 30 MHz |
Minimum Operating Temperature | - 50 C | - 50 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Series | FJA4313 | FJA4313 |
DC Current Gain hFE Max | 160 | 160 |
Height | 18.9 mm | 18.9 mm (Max) |
Length | 15.8 mm | 15.8 mm (Max) |
Packaging | Tube | - |
Width | 5 mm | 5 mm (Max) |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Continuous Collector Current | 15 A | 15 A |
DC Collector/Base Gain hfe Min | 55 | 55 |
Pd Power Dissipation | 130 W | 130 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 450 | 450 |
Subcategory | Transistors | Transistors |
Part # Aliases | FJA4313OTU_NL | FJA4313RTU_NL |
Unit Weight | 0.225789 oz | 0.225789 oz |