PartNumber | FJN3305RTA | FJN3305RBU |
Description | Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial | Bipolar Transistors - Pre-Biased 50V/100mA/4.7K 10K |
Manufacturer | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
RoHS | Y | Y |
Configuration | Single | Single |
Transistor Polarity | NPN | NPN |
Typical Input Resistor | 4.7 kOhms | 4.7 kOhms |
Typical Resistor Ratio | 0.47 | 0.47 |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-92-3 Kinked Lead | TO-92-3 |
DC Collector/Base Gain hfe Min | 30 | 30 |
Collector Emitter Voltage VCEO Max | 50 V | 50 V |
Continuous Collector Current | 0.1 A | 0.1 A |
Peak DC Collector Current | 100 mA | 100 mA |
Pd Power Dissipation | 300 mW | 300 mW |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Series | FJN3305R | - |
Packaging | Ammo Pack | Bulk |
DC Current Gain hFE Max | 30 | 30 |
Emitter Base Voltage VEBO | 10 V | 10 V |
Height | 5.33 mm | 5.33 mm |
Length | 5.2 mm | 5.2 mm |
Type | NPN Epitaxial Silicon Transistor | NPN Epitaxial Silicon Transistor |
Width | 4.19 mm | 4.19 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
Factory Pack Quantity | 2000 | 1000 |
Subcategory | Transistors | Transistors |
Unit Weight | 0.008466 oz | 0.006286 oz |