FJN3308

FJN3308RBU vs FJN3308RTA vs FJN3308R

 
PartNumberFJN3308RBUFJN3308RTAFJN3308R
DescriptionBipolar Transistors - Pre-Biased 50V/100mA/47K 22KTRANS PREBIAS NPN 300MW TO92-3
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
ConfigurationSingle--
Transistor PolarityNPN--
Typical Input Resistor47 kOhms--
Typical Resistor Ratio2.1--
Mounting StyleThrough Hole--
Package / CaseTO-92-3--
DC Collector/Base Gain hfe Min56--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current0.1 A--
Peak DC Collector Current100 mA--
Pd Power Dissipation300 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingBulk--
DC Current Gain hFE Max56--
Emitter Base Voltage VEBO10 V--
Height5.33 mm--
Length5.2 mm--
TypeNPN Epitaxial Silicon Transistor--
Width4.19 mm--
BrandON Semiconductor / Fairchild--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.006286 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FJN3308RBU Bipolar Transistors - Pre-Biased 50V/100mA/47K 22K
ON Semiconductor
ON Semiconductor
FJN3308RTA TRANS PREBIAS NPN 300MW TO92-3
FJN3308RBU TRANS PREBIAS NPN 300MW TO92-3
FJN3308R New and Original
Top