| PartNumber | FJNS4202RTA | FJNS4203RBU | FJNS4203RTA |
| Description | Bipolar Transistors - Pre-Biased PNP Si Transistor Epitaxial | Bipolar Transistors - Pre-Biased 50V/100mA/22K 22K | Bipolar Transistors - Pre-Biased PNP Si Transistor Epitaxial |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
| RoHS | Y | Y | Y |
| Configuration | Single | Single | Single |
| Transistor Polarity | PNP | PNP | PNP |
| Typical Input Resistor | 10 kOhms | 22 kOhms | 22 kOhms |
| Typical Resistor Ratio | 1 | 1 | 1 |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-92-3 | TO-92-3 | TO-92-3 |
| DC Collector/Base Gain hfe Min | 30 | 56 | 56 |
| Collector Emitter Voltage VCEO Max | 50 V | 50 V | 50 V |
| Continuous Collector Current | - 0.1 A | - 0.1 A | - 0.1 A |
| Peak DC Collector Current | 100 mA | 100 mA | 100 mA |
| Pd Power Dissipation | 300 mW | 300 mW | 300 mW |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Packaging | Ammo Pack | Bulk | Ammo Pack |
| DC Current Gain hFE Max | 30 | 56 | 56 |
| Emitter Base Voltage VEBO | - 10 V | - 10 V | - 10 V |
| Height | 3.7 mm | 3.7 mm | 3.7 mm |
| Length | 4 mm | 4 mm | 4 mm |
| Type | PNP Epitaxial Silicon Transistor | PNP Epitaxial Silicon Transistor | PNP Epitaxial Silicon Transistor |
| Width | 2.31 mm | 2.31 mm | 2.31 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
| Factory Pack Quantity | 3000 | 1000 | 3000 |
| Subcategory | Transistors | Transistors | Transistors |
| Unit Weight | 0.006286 oz | 0.006286 oz | 0.006286 oz |