PartNumber | FJNS4211RBU | FJNS4212RTA | FJNS4212RBU |
Description | Bipolar Transistors - Pre-Biased PNP/40/100mA/22K | Bipolar Transistors - Pre-Biased PNP Si Transistor Epitaxial | Bipolar Transistors - Pre-Biased PNP/40/100mA/47K |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
RoHS | Y | Y | Y |
Configuration | Single | Single | Single |
Transistor Polarity | PNP | PNP | PNP |
Typical Input Resistor | 22 kOhms | 47 kOhms | 47 kOhms |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-92-3 | TO-92-3 | TO-92-3 |
DC Collector/Base Gain hfe Min | 100 | 100 | 100 |
Collector Emitter Voltage VCEO Max | 40 V | 40 V | 40 V |
Continuous Collector Current | - 0.1 A | - 0.1 A | - 0.1 A |
Peak DC Collector Current | 100 mA | 100 mA | 100 mA |
Pd Power Dissipation | 300 mW | 300 mW | 300 mW |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Packaging | Bulk | Ammo Pack | Bulk |
DC Current Gain hFE Max | 600 | 600 | 600 |
Emitter Base Voltage VEBO | - 5 V | - 5 V | - 5 V |
Height | 3.7 mm | 3.7 mm | 3.7 mm |
Length | 4 mm | 4 mm | 4 mm |
Type | PNP Epitaxial Silicon Transistor | PNP Epitaxial Silicon Transistor | PNP Epitaxial Silicon Transistor |
Width | 2.31 mm | 2.31 mm | 2.31 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
Factory Pack Quantity | 1000 | 3000 | 1000 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 0.006286 oz | 0.006286 oz | 0.006286 oz |