FJV3110R

FJV3110RMTF vs FJV3110R vs FJV3110R-NL

 
PartNumberFJV3110RMTFFJV3110RFJV3110R-NL
DescriptionBipolar Transistors - Pre-Biased NPN/40V/100mA/10K
ManufacturerON SemiconductorFAIRCHILD-
Product CategoryBipolar Transistors - Pre-BiasedTransistors (BJT) - Single, Pre-Biased-
RoHSY--
ConfigurationSingleSingle-
Transistor PolarityNPNNPN-
Typical Input Resistor10 kOhms10 kOhms-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3--
DC Collector/Base Gain hfe Min100--
Collector Emitter Voltage VCEO Max40 V--
Continuous Collector Current0.1 A0.1 A-
Peak DC Collector Current100 mA100 mA-
Pd Power Dissipation200 mW--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesFJV3110R--
PackagingReelReel-
DC Current Gain hFE Max600--
Emitter Base Voltage VEBO5 V--
Height0.93 mm--
Length2.92 mm--
TypeNPN Epitaxial Silicon Transistor--
Width1.3 mm--
BrandON Semiconductor / Fairchild--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # AliasesFJV3110RMTF_NL--
Unit Weight0.000282 oz0.002116 oz-
Part Aliases-FJV3110RMTF_NL-
Package Case-SOT-23-3-
Pd Power Dissipation-0.2 W-
Collector Emitter Voltage VCEO Max-40 V-
Emitter Base Voltage VEBO-5 V-
DC Collector Base Gain hfe Min-100-
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FJV3110RMTF Bipolar Transistors - Pre-Biased NPN/40V/100mA/10K
ON Semiconductor
ON Semiconductor
FJV3110RMTF Bipolar Transistors - Pre-Biased NPN/40V/100mA/10K
FJV3110R New and Original
FJV3110R-NL New and Original
FJV3110RMTF , MAX4214UK New and Original
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