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| PartNumber | FJV3113RMTF | FJV3113RMTF_Q | FJV3113RMTF , 1N5935B |
| Description | Bipolar Transistors - Pre-Biased 50V/100mA/2.2K 47K | Bipolar Transistors - Pre-Biased 50V/100mA/2.2K 47K | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - Pre-Biased | - | - |
| RoHS | Y | - | - |
| Configuration | Single | - | - |
| Transistor Polarity | NPN | - | - |
| Typical Input Resistor | 2.2 kOhms | - | - |
| Typical Resistor Ratio | 0.047 | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | - | - |
| DC Collector/Base Gain hfe Min | 68 | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | 0.1 A | - | - |
| Peak DC Collector Current | 100 mA | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | FJV3113R | - | - |
| Packaging | Reel | - | - |
| DC Current Gain hFE Max | 68 | - | - |
| Emitter Base Voltage VEBO | 10 V | - | - |
| Height | 0.93 mm | - | - |
| Length | 2.92 mm | - | - |
| Type | NPN Epitaxial Silicon Transistor | - | - |
| Width | 1.3 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000282 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FJV3113RMTF | Bipolar Transistors - Pre-Biased 50V/100mA/2.2K 47K | |
ON Semiconductor |
FJV3113RMTF | TRANS PREBIAS NPN 200MW SOT23-3 | |
| FJV3113RMTF_Q | Bipolar Transistors - Pre-Biased 50V/100mA/2.2K 47K | ||
| FJV3113RMTF , 1N5935B | New and Original |