FJV3114

FJV3114RMTF vs FJV3114R vs FJV3114R-NL

 
PartNumberFJV3114RMTFFJV3114RFJV3114R-NL
DescriptionBipolar Transistors - Pre-Biased 50V/100mA/4.7K 47K
ManufacturerON SemiconductorFAIRCHILD-
Product CategoryBipolar Transistors - Pre-BiasedTransistors (BJT) - Single, Pre-Biased-
RoHSY--
ConfigurationSingleSingle-
Transistor PolarityNPNNPN-
Typical Input Resistor4.7 kOhms4.7 kOhms-
Typical Resistor Ratio0.10.1-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3--
DC Collector/Base Gain hfe Min68--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current0.1 A0.1 A-
Peak DC Collector Current100 mA100 mA-
Pd Power Dissipation200 mW--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesFJV3114R--
PackagingReelReel-
DC Current Gain hFE Max68--
Emitter Base Voltage VEBO10 V--
Height0.93 mm--
Length2.92 mm--
TypeNPN Epitaxial Silicon Transistor--
Width1.3 mm--
BrandON Semiconductor / Fairchild--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz0.002116 oz-
Package Case-SOT-23-3-
Pd Power Dissipation-0.2 W-
Collector Emitter Voltage VCEO Max-50 V-
Emitter Base Voltage VEBO-10 V-
DC Collector Base Gain hfe Min-68-
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FJV3114RMTF Bipolar Transistors - Pre-Biased 50V/100mA/4.7K 47K
ON Semiconductor
ON Semiconductor
FJV3114RMTF Bipolar Transistors - Pre-Biased 50V/100mA/4.7K 47K
FJV3114R New and Original
FJV3114R-NL New and Original
FJV3114RMTF , 1N5936B New and Original
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