FJX301

FJX3012RTF vs FJX3010RTF vs FJX3011RTF

 
PartNumberFJX3012RTFFJX3010RTFFJX3011RTF
DescriptionBipolar Transistors - Pre-Biased NPN Si Transistor EpitaxialTRANS PREBIAS NPN 200MW SOT323TRANS PREBIAS NPN 200MW SOT323
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
ConfigurationSingle--
Transistor PolarityNPN--
Typical Input Resistor47 kOhms--
Mounting StyleSMD/SMT--
Package / CaseSOT-323-3--
DC Collector/Base Gain hfe Min100--
Collector Emitter Voltage VCEO Max40 V--
Continuous Collector Current0.1 A--
Peak DC Collector Current100 mA--
Pd Power Dissipation200 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingReel--
DC Current Gain hFE Max600--
Emitter Base Voltage VEBO5 V--
Height0.9 mm--
Length2 mm--
TypeNPN Epitaxial Silicon Transistor--
Width1.25 mm--
BrandON Semiconductor / Fairchild--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000176 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FJX3014RTF Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
FJX3012RTF Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
FJX3013RTF Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
ON Semiconductor
ON Semiconductor
FJX3014RTF Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
FJX3010RTF TRANS PREBIAS NPN 200MW SOT323
FJX3011RTF TRANS PREBIAS NPN 200MW SOT323
FJX3012RTF TRANS PREBIAS NPN 200MW SOT323
FJX3013RTF TRANS PREBIAS NPN 200MW SOT323
FJX3015RTF TRANS PREBIAS NPN 200MW SOT323
FJX3014RTF_Q Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
FJX3010RTF , 1N757A New and Original
FJX3012R New and Original
FJX3012RTF , 1N757ATR New and Original
FJX3013RT New and Original
FJX3013RTF , 1N758A New and Original
FJX3014R New and Original
FJX3014RTF , 1N816 New and Original
FJX3015RTF , 1N914 New and Original
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