FP10R12W1T7

FP10R12W1T7B11BOMA1 vs FP10R12W1T7B3BOMA1 vs FP10R12W1T7PB3BPSA1

 
PartNumberFP10R12W1T7B11BOMA1FP10R12W1T7B3BOMA1FP10R12W1T7PB3BPSA1
DescriptionIGBT ModulesIGBT ModulesIGBT Modules
ManufacturerInfineonInfineonInfineon
Product CategoryIGBT ModulesIGBT ModulesIGBT Modules
RoHSY--
TechnologyIGBT7-T7--
ProductIGBT Silicon Modules--
ConfigurationPIM--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage1.6 V--
Continuous Collector Current at 25 C10 A--
Gate Emitter Leakage Current100 nA--
Package / CaseAG-EASY1B-2--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 175 C--
PackagingTrayTrayTray
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Mounting StyleScrew Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT ModulesIGBT ModulesIGBT Modules
Factory Pack Quantity242430
SubcategoryIGBTsIGBTsIGBTs
Part # Aliases-FP10R12W1T7_B3 SP003654844FP10R12W1T7P_B3 SP003654838
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
FP10R12W1T7B11BOMA1 IGBT Modules
FP10R12W1T7B3BOMA1 IGBT Modules
FP10R12W1T7PB3BPSA1 IGBT Modules
FP10R12W1T7B11BOMA1 LOW POWER EASY
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