FP25R12KE

FP25R12KE3 vs FP25R12KE3BOSA1 vs FP25R12KE3N

 
PartNumberFP25R12KE3FP25R12KE3BOSA1FP25R12KE3N
DescriptionIGBT Modules 1200V 25A PIMIGBT MODULE 1200V 25A
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSN--
ProductIGBT Silicon Modules--
ConfigurationHex--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage1.7 V--
Continuous Collector Current at 25 C40 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation150 W--
Package / CaseEconoPIM2--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
PackagingTray--
Height17 mm--
Length107.5 mm--
Width45 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesFP25R12KE3BOSA1 SP000100411--
Unit Weight6.349313 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
FP25R12KE3 IGBT Modules 1200V 25A PIM
FP25R12KE3BOSA1 IGBT MODULE 1200V 25A
FP25R12KE3N New and Original
FP25R12KE3NEW New and Original
FP25R12KE3 IGBT Modules 1200V 25A PIM
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