![]() | ![]() | ||
| PartNumber | FP50R06KE3 | FP50R06W2E3 | FP50R06KE3BOSA1 |
| Description | IGBT Modules N-CH 600V 60A | IGBT Modules IGBT 600V 50A | IGBT MODULE VCES 600V 50A |
| Manufacturer | Infineon | Infineon | - |
| Product Category | IGBT Modules | IGBT Modules | - |
| RoHS | Y | - | - |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | - |
| Configuration | Array 7 | IGBT-Inverter | - |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V | - |
| Continuous Collector Current at 25 C | 60 A | 65 A | - |
| Package / Case | Econo 2 | Module | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Packaging | Tray | Tray | - |
| Height | 17 mm | - | - |
| Length | 107.5 mm | - | - |
| Width | 45 mm | - | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Mounting Style | Chassis Mount | SMD/SMT | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Product Type | IGBT Modules | IGBT Modules | - |
| Factory Pack Quantity | 10 | 15 | - |
| Subcategory | IGBTs | IGBTs | - |
| Part # Aliases | FP50R06KE3BOSA1 SP000091922 | FP50R06W2E3BOMA1 SP000375909 | - |
| Unit Weight | 6.349313 oz | 1.375685 oz | - |
| Collector Emitter Saturation Voltage | - | 1.45 V | - |
| Gate Emitter Leakage Current | - | 400 nA | - |
| Pd Power Dissipation | - | 175 W | - |