PartNumber | FQB10N50CFTM-WS | FQB11N40CTM | FQB10N20LTM |
Description | MOSFET 500V 10A N-Channel | MOSFET 400V N-Channel Adv Q-FET C-Series | MOSFET 200V N-Ch QFET Logic Level |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | E | E |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 500 V | 400 V | 200 V |
Id Continuous Drain Current | 10 A | 10.5 A | 10 A |
Rds On Drain Source Resistance | 610 mOhms | 500 mOhms | 360 mOhms |
Vgs Gate Source Voltage | 30 V | 30 V | 20 V |
Qg Gate Charge | 45 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 143 W | 135 W | 3.13 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Reel |
Height | 4.83 mm | 4.83 mm | 4.83 mm |
Length | 10.67 mm | 10.67 mm | 10.67 mm |
Series | FQB10N50CFTM | FQB11N40C | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 9.65 mm | 9.65 mm | 9.65 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Fall Time | 55 ns | 81 ns | 95 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 47 ns | 89 ns | 150 ns |
Factory Pack Quantity | 800 | 800 | 800 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 138 ns | 81 ns | 50 ns |
Typical Turn On Delay Time | 25 ns | 14 ns | 13 ns |
Part # Aliases | FQB10N50CFTM_WS | FQB11N40CTM_NL | - |
Unit Weight | 0.046296 oz | 0.046296 oz | 0.011640 oz |
Type | - | MOSFET | MOSFET |
Forward Transconductance Min | - | 7.1 S | 10.7 S |