PartNumber | FQD3N60CTM-WS | FQD3N50CTF | FQD3N50CTM |
Description | MOSFET 600V 2.4A N-Channel Q-FET | MOSFET 500V N-Channel Advancd QFET C-seris | MOSFET 500V N-CHA NNEL MOSFET |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | E | E |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 500 V | 500 V |
Id Continuous Drain Current | 2.4 A | 2.5 A | 2.5 A |
Rds On Drain Source Resistance | 3.4 Ohms | 2.1 Ohms | 2.1 Ohms |
Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
Qg Gate Charge | 10.5 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 50 W | 35 W | 35 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | QFET | - | - |
Packaging | Reel | Reel | Reel |
Height | 2.39 mm | 2.39 mm | 2.39 mm |
Length | 6.73 mm | 6.73 mm | 6.73 mm |
Series | FQD3N60CTM_WS | - | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 6.22 mm | 6.22 mm | 6.22 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Fall Time | 35 ns | 25 ns | 25 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 30 ns | 25 ns | 25 ns |
Factory Pack Quantity | 2500 | 2000 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 35 ns | 35 ns | 35 ns |
Typical Turn On Delay Time | 12 ns | 10 ns | 10 ns |
Part # Aliases | FQD3N60CTM_WS | FQD3N50CTF_NL | FQD3N50CTM_NL |
Unit Weight | 0.009184 oz | 0.000557 oz | 0.139332 oz |
Type | - | MOSFET | MOSFET |
Forward Transconductance Min | - | 1.5 S | 1.5 S |